Semiconductor light emitting device and method of fabricating the same

ABSTRACT

A method of manufacturing a semiconductor light-emitting device, comprises the steps of providing a first substrate; providing multiple epitaxial units on the first substrate, wherein the plurality of epitaxial units comprises: multiple first epitaxial units, wherein each of the first epitaxial units has a first geometric shape and a first area; and multiple second epitaxial units, wherein each of the second epitaxial units has a second geometric shape and a second area; providing a second substrate with a surface; transferring the multiple second epitaxial units to the surface of the second substrate; and dividing the first substrate to form multiple first semiconductor light-emitting devices, wherein each of the first semiconductor light-emitting devices has the first epitaxial unit; wherein the first geometric shape is different from the second geometric shape, or the first area is different from the second area.

TECHNICAL FIELD

The application is related to a method of fabricating a semiconductorlight-emitting device, and especially is related to a fabricating methodof forming two different semiconductor epitaxial stacks on a singlesubstrate.

DESCRIPTION OF BACKGROUND ART

As the technology developing, the semiconductor light-emitting devicehas significantly contributed to information, communications, and energyconversion applications. For example, the semiconductor light-emittingdevice can be applied to fiber-optic communications, optical storage andmilitary systems. For energy conversion applications, the semiconductorlight-emitting device generally has three types: a device for convertingelectrical energy into light, such as light-emitting diode; a device forconverting light signal into electrical signal, such as opticaldetector; and a device for converting light radiation energy intoelectrical energy, such as solar cell.

Growth substrate is very important for the semiconductor light-emittingdevice. Semiconductor epitaxial structure, which is necessary forforming the semiconductor light-emitting device, is formed on the growthsubstrate and is also supported by the growth substrate. Therefore, itis important to choose a suitable growth substrate for growing a highquality semiconductor epitaxial structure of the semiconductorlight-emitting device.

However, a substrate suitable for growth is sometimes not suitable forsupport. In conventional process of fabricating the red light diode,GaAs substrate, which is opaque to red light, is used as the growthsubstrate, because the difference of the lattice constant between GaAssubstrate and the semiconductor epitaxial structure of the red lightdevice is the smallest. But, the opaque growth substrate reduces thelight-emitting efficiency of the light device, as the light device isoperated for emitting a light.

Since the growth substrate and the support substrate for the lightdevice should meet different conditions, the technology of transferringsubstrate is developed. Namely, the semiconductor epitaxial structuregrows on the growth substrate firstly, and then the semiconductorepitaxial structure is transferred to the support substrate for thefollowing fabricating process. The steps of transferring thesemiconductor epitaxial structure from the growth substrate to thesupport substrate include removing the growth substrate and bonding thesemiconductor epitaxial structure and the support substrate, whereinremoving the growth substrate is one of the key steps.

The method of removing the growth substrate from the semiconductorepitaxial structure includes dissolving the growth substrate by etchant,grinding the growth substrate, or forming a sacrificial layer betweenthe growth substrate and the semiconductor epitaxial structure inadvance and removing the sacrificial layer by etching process toseparate the growth substrate and the semiconductor epitaxial structure.However, the growth substrate is going to be discarded no matter in theprocess of dissolving the growth substrate by etchant or the process ofgrinding the growth substrate. The growth substrate that cannot bereused means a waste in the environmentally-oriented era. So, forfabricating the semiconductor light-emitting device, if the growthsubstrate and the semiconductor epitaxial structure are separated byusing the sacrificial layer, how to effectively implement the process ofselectively transferring the semiconductor epitaxial structure is one ofthe research topics.

SUMMARY OF THE DISCLOSURE

A method of manufacturing a semiconductor light-emitting device,comprises the steps of providing a first substrate; providing multipleepitaxial units on the first substrate, wherein the plurality ofepitaxial units comprises: multiple first epitaxial units, wherein eachof the first epitaxial units has a first geometric shape and a firstarea; and multiple second epitaxial units, wherein each of the secondepitaxial units has a second geometric shape and a second area;providing a second substrate with a surface; transferring the multiplesecond epitaxial units to the surface of the second substrate; anddividing the first substrate to form multiple first semiconductorlight-emitting devices, wherein each of the first semiconductorlight-emitting devices has the first epitaxial unit; wherein the firstgeometric shape is different from the second geometric shape, or thefirst area is different from the second area.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A shows a side view of a semiconductor light-emitting deviceduring the process in accordance with the first step of a manufacturingmethod of the first embodiment of the present application;

FIG. 1B shows a side view of a semiconductor light-emitting deviceduring the process in accordance with the second step of a manufacturingmethod of the first embodiment of the present application;

FIG. 1C shows a side view of a semiconductor light-emitting deviceduring the process in accordance with the third step of a manufacturingmethod of the first embodiment of the present application;

FIG. 1D shows a side view of a semiconductor light-emitting deviceduring the process in accordance with the fourth step of a manufacturingmethod of the first embodiment of the present application;

FIG. 1E shows a side view of a semiconductor light-emitting deviceduring the process in accordance with the fifth step of a manufacturingmethod of the first embodiment of the present application;

FIG. 1F shows a side view of a semiconductor light-emitting deviceduring the process in accordance with the sixth step of a manufacturingmethod of the first embodiment of the present application;

FIG. 1G shows a first side view of a semiconductor light-emitting deviceduring the process in accordance with the seventh step of amanufacturing method of the first embodiment of the present application;

FIG. 1H shows a second side view of a semiconductor light-emittingdevice during the process in accordance with the seventh step of amanufacturing method of the first embodiment of the present application;

FIG. 2A shows a side view of a semiconductor light-emitting deviceduring the process in accordance with the first step of a manufacturingmethod of the second embodiment of the present application;

FIG. 2B shows a side view of a semiconductor light-emitting deviceduring the process in accordance with the second step of a manufacturingmethod of the second embodiment of the present application;

FIG. 2C shows a side view of a semiconductor light-emitting deviceduring the process in accordance with the third step of a manufacturingmethod of the second embodiment of the present application;

FIG. 2D shows a side view of a semiconductor light-emitting deviceduring the process in accordance with the fourth step of a manufacturingmethod of the second embodiment of the present application;

FIG. 2E shows a side view of a semiconductor light-emitting deviceduring the process in accordance with the fifth step of a manufacturingmethod of the second embodiment of the present application;

FIG. 2F shows a side view of a semiconductor light-emitting deviceduring the process in accordance with the sixth step of a manufacturingmethod of the second embodiment of the present application;

FIG. 2G shows a first side view of a semiconductor light-emitting deviceduring the process in accordance with the seventh step of amanufacturing method of the second embodiment of the presentapplication;

FIG. 2H shows a second side view of a semiconductor light-emittingdevice during the process in accordance with the fifth step of amanufacturing method of the second embodiment of the presentapplication;

FIG. 3A shows a first top view of the semiconductor light-emittingdevice during the process in accordance with the seventh step of thefirst embodiment of the present application;

FIG. 3B shows a side view of the semiconductor light-emitting deviceduring the process in accordance with the eighth step of the firstembodiment of the present application;

FIG. 3C shows a top view of the semiconductor light-emitting deviceduring the process in accordance with the eighth step of the firstembodiment of the present application;

FIG. 4A shows a second top view of the semiconductor light-emittingdevice during the process in accordance with the seventh step of thefirst embodiment of the present application;

FIG. 4B shows a side view of the second semiconductor light-emittingdevice during the process in accordance with the eighth step of thefirst embodiment of the present application;

FIG. 4C shows a top view of the second semiconductor light-emittingdevice during the process in accordance with the eighth step of thefirst embodiment of the present application;

FIG. 5A shows a top view of the high-voltage semiconductorlight-emitting device during the process in accordance with the firststep of the first embodiment of the present application;

FIG. 5B shows a side view of the high-voltage semiconductorlight-emitting device during the process in accordance with the firststep of the first embodiment of the present application;

FIG. 6A shows a side view of the encapsulated semiconductorlight-emitting device during the process in accordance with the firststep of the third embodiment of the present application;

FIG. 6B shows a side view of the encapsulated semiconductorlight-emitting device during the process in accordance with the secondstep of the third embodiment of the present application;

FIG. 6C shows a side view of the encapsulated semiconductorlight-emitting device during the process in accordance with the thirdstep of the third embodiment of the present application;

FIG. 6D shows a side view of the encapsulated semiconductorlight-emitting device during the process in accordance with the fourthstep of the third embodiment of the present application;

FIG. 6E shows a side view of the encapsulated semiconductorlight-emitting device during the process in accordance with the fifthstep of the third embodiment of the present application;

FIG. 7 shows a top view of the semiconductor light-emitting deviceduring the process in accordance with the sixth step of the firstembodiment of the present application;

FIG. 8 shows a top view of the encapsulated semiconductor light-emittingdevice during the process in accordance with the fifth step of the thirdembodiment of the present application;

FIG. 9 shows a top view of the semiconductor light-emitting deviceduring the process in accordance with the first step of the fourthembodiment of the present application;

FIG. 10A shows an oblique side view of the semiconductor light-emittingdevice during the process in accordance with the second step of thefourth embodiment of the present application;

FIG. 10B shows an oblique side view of the semiconductor light-emittingdevice during the process in accordance with the second step of thefourth embodiment of the present application;

FIG. 11A shows a side view of the semiconductor light-emitting devicesduring the process in accordance with the first step of the fifthembodiment of the present application;

FIG. 11B shows a side view of the semiconductor light-emitting devicesduring the process in accordance with the second step of the fifthembodiment of the present application;

FIG. 11C shows a side view of the semiconductor light-emitting devicesduring the process in accordance with the third step of the fifthembodiment of the present application;

FIG. 11D shows a side view of the semiconductor light-emitting devicesduring the process in accordance with the fourth step of the fifthembodiment of the present application;

FIG. 11E shows a side view of the semiconductor light-emitting devicesduring the process in accordance with the fifth step of the fifthembodiment of the present application;

FIG. 12A shows a side view of the conventional flip-chip typesemiconductor light-emitting device;

FIG. 12B shows a side view of the flip-chip type semiconductorlight-emitting device in accordance with the first embodiment of thepresent application;

FIG. 13 shows an oblique side view of the semiconductor light-emittingdevice in accordance with the first step of the fourth embodiment of thepresent application;

FIG. 14A shows a top view of the semiconductor light-emitting device inaccordance with the fourth embodiment of the present application;

FIG. 14B shows an oblique side view of the semiconductor light-emittingdevice in accordance with the fourth embodiment of the presentapplication;

FIG. 14C shows a top view of the other type semiconductor light-emittingdevice in accordance with the fourth embodiment of the presentapplication;

FIG. 14D shows an oblique side view of the other type semiconductorlight-emitting device in accordance with the fourth embodiment of thepresent application.

REFERENCE SIGNS

-   Growth substrate 10, 210, 510;-   n-type semiconductor layer 112, 2112, 5112;-   Active layer 114, 2114, 5114;-   p-type semiconductor layer 116, 2116, 5116;-   Semiconductor epitaxial stack 110, 2110, 5110;-   p-side electrode 120 a, 120 b, 2120 a, 2120 b, 5120 b;-   First support substrate 20, 220, 520, 60;-   First adhesive layer 135, 2135, 5130;-   n-side electrode 130 a, 130 b, 2130 a, 2130 b, 130 b′, 5120 a;-   Metal oxide transparent conductive layer 140, 2140;-   Reflective layer 150, 2150;-   First epitaxial unit 201, 2201, 501;-   Second epitaxial unit 202, 2202, 502, 501′;-   Second adhesive layer 230, 2230, 5230;-   Transparent metal oxide conductive layer 5280;-   Second support substrate 30, 530;-   Semiconductor light-emitting device 200, 300, 400, 500, 600;-   Patterned sacrificial layer 2123;-   p-type extension 130 a′, 5120 b′;-   n-type extension 130 a″;-   Conductive through hole 134;-   Insulative layer 132, 232;-   Third epitaxial unit 202′;-   Metal conductive connection structure 125;-   p-type bonding pad 120 b′, 1310;-   n-type bonding pad 120 b″, 1320;-   Transparent structure 40;-   Insulative scattering layer 410;-   Opening 411, 412;-   Second support substrate unit 530′;-   Cross epitaxial unit 501′;-   Tin solder 260, 560;-   submount 50′, 20′;-   light-emitting device 5000, 2000;-   Symmetrical surface A′, B′;-   direction D°

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS First Embodiment

FIGS. 1A to 1H show a method of manufacturing a semiconductorlight-emitting device in accordance with an embodiment of theapplication.

FIG. 1A shows a semiconductor epitaxial stack 110 including an n-typesemiconductor layer 112, an active layer 114, and a p-type semiconductorlayer 116 on a growth substrate 10. The n-type semiconductor layer 112,the active layer 114, and the p-type semiconductor layer 116 can besequentially formed on the growth substrate 10 by conventional epitaxialgrowth process. In the embodiment, the material of the growth substrate10 comprises GaAs, germanium (Ge), indium phosphide (InP), sapphire(Al₂O₃), silicon carbide (SiC), silicon (Si), lithium aluminum oxide(LiAlO₂), zinc oxide (ZnO), gallium nitride (GaN), or aluminum nitride(AlN). In the embodiment, the n-type semiconductor layer 112 can bealuminum gallium indium phosphide (AlGaInP) series material or othermaterials; the material of the p-type semiconductor layer 116 can be GaPor other materials; the material of the active layer 114 comprisesaluminum gallium indium phosphide (AlGaInP) series material, aluminumgallium indium nitride (AlGaInN) series material or zinc oxide (ZnO)series material, and the structure of the active layer 114 comprisessingle heterostructure (SH), double heterostructure (DH), double-sidedouble heterostructure (DDH), or multi-quantum well (MWQ) structure.Specifically, the active layer 114 can be made of intrinsic, p-type or,n-type semiconductor material. While an electrical current flows throughthe semiconductor epitaxial stack 110, the active layer 114 is able toemit a light. When the active layer 114 is made of aluminum galliumindium phosphide (AlGaInP) series material, the active layer 114 is ableto emit an amber series of light, such as a red light, an orange lightand a yellow light. When the active layer 114 is made of aluminumgallium indium nitride (AlGaInN) series material, the active layer 114is able to emit a blue or a green light. Besides, the semiconductorepitaxial stack 110 can include more semiconductor layers with differentfunctions.

FIG. 1B shows that the p-side electrodes 120 a, 120 b are patterned onthe p-type semiconductor layer 116 by lithography process withsputtering, thermal deposition, or electroplating method. The materialof the p-side electrodes 120 a, 120 b can be metal, such as Au, Ag, Cu,Al, Pt, Ni, Ti, Sn, and the alloy thereof or the stacking layersthereof.

As FIG. 1C shows, after forming the p-type semiconductor layer 116, afirst support substrate 20 is prepared, and a first adhesive layer 135is formed on the first support substrate 20 by spin coating ordeposition. And, the semiconductor epitaxial stack 110 is adhered to thefirst support substrate 20 with the first adhesive layer 135. Then, thegrowth substrate 10 can be removed by wet etching or laser lift-off. Thefirst support substrate 20 can be made from single material and can becomposite substrate which is made from combination of differentmaterials. For example, the first support substrate 20 can include afirst substrate and a second substrate which is bonded with the firstsubstrate (not shown). In the embodiment, the material of the supportsubstrate 20 comprises inorganic material, such as sapphire (Al₂O₃),lithium aluminum oxide (LiAlO₂), zinc oxide (ZnO), gallium nitride(GaP), glass and aluminum nitride (AlN), or organic polymer material. AsFIG. 1C shows, a transferring structure is formed by the semiconductorepitaxial stack 110 transferred to the first support substrate 20 andthe first support substrate 20. In order to increase the light-emittingefficiency of the semiconductor light-emitting device made from thesemiconductor epitaxial stack 110, a portion of the surface of thep-type semiconductor layer 116 can be roughened by wet etching or dryetching.

After the semiconductor epitaxial stack 110 is transferred to thesupport substrate 20, the patterned n-side electrodes 130 a, 130 b areformed on the exposed surface of the n-type semiconductor layer 112 bylithography process with sputtering, thermal deposition, orelectroplating as shown in FIG. 1D. The material of the n-sideelectrodes 130 a, 130 b can be metal, such as Au, Ag, Cu, Al, Pt, Ni,Ti, Sn, and the alloy thereof or the stacking layers thereof.

FIG. 1E shows that, in order to fit different processes of fabricatingdifferent semiconductor light-emitting devices, the following processeson the n-side electrodes 130 a, 130 b can be the same or different. Inthe embodiment, a metal oxide transparent conductive layer 140 is formedon the surface of the semiconductor epitaxial stack 110 by CVD or PVD.Then, a reflective layer 150 is formed on a portion of the metal oxidetransparent conductive layer 140. The material of the metal oxidetransparent conductive layer 140 comprises ITO, IZO, InO, SnO, FTO, ATO,CTO, AZO, GZO or the combination thereof; the material of the reflectivelayer 150 comprises metal, such as Au, Ag, Cu, Cr, Al, Pt, Ni, Ti, Sn,Be or the alloy or the stacking layers thereof or Distributed BraggReflector (DBR), wherein DBR is made from the stacking layers comprisingAl₂O₃, SiO₂, TiO₂ or AlN. Then, a portion of the metal oxide transparentconductive layer 140, which is uncovered by the reflective layer 150, isremoved, and the metal oxide transparent conductive layer 140 only cladsthe n-side electrode 130 a.

FIG. 1F shows a side view of multiple first epitaxial units 201 andmultiple second epitaxial units 202 above the first substrate 20disclosed in the embodiment, which are totally divided by using dryetching in order to break off the electrical connection through thesemiconductor epitaxial stack 110.

Specifically, the semiconductor epitaxial stack 110 is divided into thefirst epitaxial units 201 and the second epitaxial units 202 by forminga patterned photoresist layer (not shown) on the surface of the n-typesemiconductor layer 112 and then using the dry etching, such asInductively Coupled Plasma (ICP) and Plasma Etching (PE), to etch fromthe n-type semiconductor layer 112. In the embodiment, on the supportsubstrate 20, the first epitaxial units 201 and the second epitaxialunits 202 have different geometric shapes and areas, wherein each of thefirst epitaxial units 201 has the p-side electrode 120 a and the n-sideelectrode 130 a as shown in FIG. 1G, and each of the second epitaxialunits 202 has the p-side electrode 120 b and the n-side electrode 130 bas shown in FIG. 1H.

Besides, as FIG. 7 shows, the second epitaxial unit 202 is about aroundthe first epitaxial unit 201 from the top view. As FIG. 1F shows, inorder to increase the light-emitting efficiency of the semiconductorlight-emitting device, a portion of the surface of the n-typesemiconductor layer 112 of the first epitaxial unit 201 or/and thesecond epitaxial unit 202 can be roughened by wet etching or dryetching. Then, a patterned second adhesive layer 230 is formed on aportion of the surface of the semiconductor epitaxial stack 110, whichis corresponding to the position of the second epitaxial units 202, byspin coating or deposition through a patterned mask, such as patternedphotoresist. The portion of the semiconductor epitaxial stack 110corresponding to the second epitaxial units 202 is prepared for beingtransferred again.

The next step is to prepare a second support substrate 30. The secondsupport substrate 30 is adhered to the second epitaxial units 202 withthe patterned second adhesive layer 230 by heating or pressing. Next, alaser is irradiated through the first support substrate 20 to dissolvethe first adhesive layer 135 between the first support substrate 20 andthe p-type semiconductor layer 116, and then the second epitaxial units202 are transferred to the second support substrate 30. After the secondepitaxial units 202 are adhered to the second support substrate 30, theremaining first adhesive layer 135 on the surface of the secondepitaxial units 202 on the second support substrate 30 is removed by dryor wet etching. FIGS. 1G and 1H show the first support substrate 20 withthe first epitaxial units 201 and the second support substrate 30 withthe second epitaxial units 202, wherein the top views thereof arerespectively shown in FIGS. 3A and 4A. In the embodiment, FIG. 4A show atop view of the second epitaxial units 202, wherein the second epitaxialunits 202 are arranged in a U-shape. In the following process, the firstsupport substrate 20 and one of the first epitaxial units 201 are formedas a semiconductor light-emitting device 200, and the second supportsubstrate 30 and the second epitaxial units 202 are formed as asemiconductor light-emitting device 300, wherein the top views thereofare respectively shown in FIGS. 3C and 4C.

In the embodiment, as the above mentioned, the second epitaxial units202 and the first support substrate 20 are separated by the laser todissolve the first adhesive layer 135. Besides, a material which has lowadhesion with the first support substrate 20, such as SiO₂, can be usedas the first adhesive layer 135. The second epitaxial units 202 can beseparated from the first support substrate 20 by physical mechanicalforce after the second epitaxial units 202 are selectively adhered tothe second substrate 30 through the patterned second adhesive layer 230.

Second Embodiment

FIGS. 2A to 2H show a method of manufacturing a semiconductorlight-emitting device in accordance with another embodiment of presentapplication.

FIG. 2A shows a semiconductor epitaxial stack 2110 including an n-typesemiconductor layer 2112, an active layer 2114, and a p-typesemiconductor layer 2116 on a growth substrate 210. The n-typesemiconductor layer 2112, the active layer 2114, and the p-typesemiconductor layer 2116 can be sequentially formed on the growthsubstrate 210 by conventional epitaxial growth process. In theembodiment, the material of the growth substrate 210 comprises GaAs,germanium (Ge), indium phosphide (InP), sapphire, (Al₂O₃), siliconcarbide (SiC), silicon (Si), lithium aluminum oxide (LiAlO₂), zinc oxide(ZnO), gallium nitride (GaN) or aluminum nitride (AlN). In theembodiment, the n-type semiconductor layer 2112 can be aluminum galliumindium phosphide (AlGaInP) series material or other materials; thematerial of the p-type semiconductor layer 2116 can be GaP or othermaterials; the material of the active layer 2114 comprises aluminumgallium indium phosphide (AlGaInP) series material, aluminum galliumindium nitride (AlGaInN) series material or zinc oxide (ZnO) seriesmaterial, and the structure of the active layer 2114 comprises singleheterostructure (SH), double heterostructure (DH), double-side doubleheterostructure (DDH), or multi-quantum well (MWQ) structure.Specifically, the active layer 2114 can be made of intrinsic, p-type, orn-type semiconductor material. While an electrical current flows throughthe semiconductor epitaxial stack 2110, the active layer 2114 is able toemit a light. When the active layer 2114 is made of aluminum galliumindium phosphide (AlGaInP) series material, the active layer 2114 isable to emit an amber series of light, such as a red light, an orangelight, and a yellow light. When the active layer 2114 is made ofaluminum gallium indium nitride (AlGaInN) series material, the activelayer 2114 is able to emit a blue or a green light. Besides, thesemiconductor epitaxial stack 2110 can include more semiconductor layerswith different functions.

FIG. 2B shows that the p-side electrodes 2120 a, 2120 b are patterned onthe p-type semiconductor layer 2116 by lithography process withsputtering, thermal deposition, or electroplating. The material of thep-side electrodes 2120 a, 2120 b can be metal, such as Au, Ag, Cu, Al,Pt, Ni, Ti, Sn, and the alloy thereof or the stacking layers thereof.

As FIG. 2C shows, after the p-side electrodes 2120 a, 2120 b are formed,a support substrate 220 is provided, and a patterned sacrificial layer2123 is formed on a surface of the support substrate 220 by lithographyprocess. The position of the patterned sacrificial layer 2123 iscorresponding to multiple second epitaxial units which are prepared tobe transferred in the later step. Next, a first adhesive layer 2135 isformed by spin coating or deposition. The semiconductor epitaxial stack2110 is adhered to the first support substrate 220 by the first adhesivelayer 2135. The first adhesive layer 2135 can be coated on the surfaceof the first support substrate 220 for covering the patternedsacrificial layer 2123. In other way, the first adhesive layer 2135 canalso be coated on the surface of the p-type semiconductor layer 2116 andcover the p-side electrodes 2120 a, 2120 b. Then, the semiconductorepitaxial stack 2110 and the first support substrate 220 are bonded byheating and/or pressing. Finally, the growth substrate 210 is removed bywet etching or laser lift-off to form the structure shown in FIG. 2C.

The first support substrate 220 is not limited to a single material andcan be composite substrate which is made from combination of differentmaterials. For example, the first support substrate 220 can include afirst substrate and a second substrate which is bonded with the firstsubstrate (not shown). In the embodiment, the material of the supportsubstrate 220 comprises inorganic material, such as sapphire (Al₂O₃),lithium aluminum oxide (LiAlO₂), zinc oxide (ZnO), gallium nitride(GaP), glass and aluminum nitride (AlN), or organic polymer material. AsFIG. 2C shows, in order to increase the light-emitting efficiency of thesemiconductor light-emitting device made from the semiconductorepitaxial stack 2110, a portion of the surface of the p-typesemiconductor layer 2116 can be roughened by wet etching or dry etching.

After the semiconductor epitaxial stack 2110 is transferred to thesupport substrate 220, the patterned n-side electrodes 2130 a, 2130 bare formed on the exposed surface of the n-type semiconductor layer 2112by lithography process with sputtering, thermal deposition, orelectroplating as shown in FIG. 2D. The material of the n-sideelectrodes 2130 a, 2130 b can be metal, such as Au, Ag, Cu, Al, Pt, Ni,Ti, Sn, and the alloy thereof or the stacking layers thereof.

FIG. 2E shows that, in order to fit different processes of fabricatingdifferent semiconductor light-emitting devices, the following processeson the n-side electrodes 2130 a, 2130 b can be the same or different. Inthe embodiment, on the surface of the semiconductor epitaxial stack2110, a metal oxide transparent conductive layer 2140 and/or areflective layer 2150 can be formed on the surface of the n-typesemiconductor layer 2112 by CVD or PVD. The material of the metal oxidetransparent conductive layer 2140 comprises ITO, IZO, InO, SnO, FTO,ATO, CTO, AZO, GZO, or the combination thereof; the material of thereflective layer 2150 comprises metal, such as Au, Ag, Cu, Cr, Al, Pt,Ni, Ti, Sn, Be, or the alloy or the stacking layers thereof.

FIG. 2F shows a side view of multiple first epitaxial units 2201 andmultiple second epitaxial units 2202 above the first substrate 220disclosed in the embodiment, which are divided by dry etching. And, thefirst adhesive layer 2135 and the patterned sacrificial layer 2123 arealso divided.

Specifically, the semiconductor epitaxial stack 2110 is divided into thefirst epitaxial units 2201 and the second epitaxial units 2202 byforming a patterned photoresist layer (not shown) on the surface of then-type semiconductor layer 2112 and then the dry etching, such asInductively Coupled Plasma (ICP) and Plasma Etching (PE), to etch fromthe n-type semiconductor layer 2112. In the embodiment, on the supportsubstrate 220, the first epitaxial units 2201 and the second epitaxialunits 2202 have different geometric shapes and areas, wherein each ofthe first epitaxial units 2201 has the p-side electrode 2120 a and then-side electrode 2130 a, and each of the second epitaxial units 2202 hasthe p-side electrode 2120 b and the n-side electrode 2130 b.

As FIG. 2F shows, in order to increase the light-emitting efficiency ofthe semiconductor light-emitting device, a portion of the surface of then-type semiconductor layer 2112 of the first epitaxial unit 2201 or/andthe second epitaxial unit 2202 can be roughened by wet etching or dryetching. Then, a patterned second adhesive layer 2230 is formed on aportion of the surface of the semiconductor epitaxial stack 2110prepared for being transferred again, which is corresponding to theportion of the surface of the n-type semiconductor layer 2112 of thesecond epitaxial units 2202, by spin coating or deposition through apatterned mask, such as patterned photoresist.

In the embodiment, the material of the patterned second adhesive layer2230 comprises organic material, such as Acrylic acid, Unsaturatedpolyester, Epoxy, Oxetane, Vinyl ether, Nylon, PP, PBT, PPO, PC, ABS,and PVC; metal, such as Ti, Au, Be, W, Al, Ge, Cu, and the alloythereof; oxide, such as ITO, CTO, ATO, IZO, AZO, ZTO, ZnO, and SiO_(x);or nitride, such as SiN_(x).

The next step is to prepare a second support substrate 230. The secondepitaxial units 2202 are adhered on the second support substrate 230with the patterned second adhesive layer 2230 by heating or pressing.After the patterned sacrificial layer 2123 is removed or the adhesion ofthe patterned sacrificing layer 2123 is decreased by wet etching, dryetching, mechanical force separating, illuminating UV, or heating, thesecond epitaxial units 2202 are transferred to the second supportsubstrate 230.

Finally, the remaining first adhesive layer 2135 and/or the remainingpatterned sacrificial layer 2123 on the surface of the second epitaxialunits 2202 on the second support substrate 230 is removed by dry etchingor wet etching. FIGS. 2G and 2H show the first support substrate 220with the first epitaxial units 2201 and the second support substrate 230with the second epitaxial units 2202, wherein the top views thereof arerespectively shown in FIGS. 3A and 4A. In the following process, thefirst support substrate 220 and one of the first epitaxial units 2201are formed as a semiconductor light-emitting device 200, and the secondsupport substrate 230 and the second epitaxial units 2202 are formed asa semiconductor light-emitting device 300, wherein the top views thereofare respectively shown in FIGS. 3C and 4C.

In the embodiment, the material of the patterned sacrificial layer 2123comprises metal, such as Ti, Au, Ag, W, Al, Cr, Cu, Pt, and thecombination thereof; UV dissociating glue; or dielectric material, suchas SiO_(x) and SiN_(x). As mentioned above, the patterned sacrificiallayer 2123 can be removed by wet etching, dry etching or illuminatingUV, or the adhesion between the patterned sacrificial layer 2123 and thefirst support substrate 220 can be decreased by heating, and then thesecond epitaxial unit 2202 and the first support substrate 220 isseparated by mechanical force separating.

In the above embodiment, the side view and the top view of thesemiconductor light-emitting device 200, which can be a flip-chiplight-emitting device, are respectively shown in FIGS. 3B and 3C. Asshown in FIG. 3B, in order to form two extensions 130 a′ and 130 a″ bydry etching, such as Reactive Ion Etching (RIE), Inductively CoupledPlasma (ICP), and Plasma Etching (PE), and through a patterned mask,such as patterned photoresist (not shown), a conductive through hole 134is formed by etching the semiconductor epitaxial stack 110(2110) along adirection perpendicular to the surface of the first support substrate 20from the n-type semiconductor layer 112(2112) to the p-side electrode120 a(2120 a). An insulative layer 132 is formed on the side wall of theconductive through hole 134 by CVD or PVD to electrically insulate fromthe semiconductor epitaxial stack 110(2110), and then a metal conductivestructure is formed in the conductive through hole 134 to form a p-typeextension 130 a′ which extends to the surface of the n-typesemiconductor layer 112(2112). The p-type extension 130 a′ and then-type extension 130 a″ on the n-side electrodes 130 a(2130 a) areformed at the same step and are able to constitute the two extensionalelectrodes of the flip-chip type semiconductor light-emitting device200. In another embodiment, when the flip-chip type semiconductorlight-emitting device 200 electrically connects to the externalelectrical component, such as printed circuit board, the surface a ofthe n-type extension 130 a″ and the surface b of the p-type extension130 a′ on the same side of the first epitaxial unit 201 can be designedto be in the same high level for forming a more reliable and more stableconnecting structure.

In the aforementioned embodiment, FIGS. 4B and 4C respectively show theside view and the top view of the semiconductor light-emitting device300, which is a high-voltage single chip LED device, being transferredto the second support substrate 30. In order to clearly present theprocess of producing the semiconductor light-emitting device 300, theprocess steps and the structure are shown in FIGS. 4A, 5A, 5B, 4B and4C.

As shown in FIG. 4A, the second epitaxial unit 202(2202) is transferredto the second substrate 30(230), wherein the p-side electrodes 120b(2120 b) are directly formed on the p-type semiconductor layer116(2116) after the semiconductor epitaxial stack 110 is formed on thegrowth substrate 10(210), and the n-side electrodes 130 b(2130 b) aredirectly formed on the n-type semiconductor layer 112(2112) after thefirst substrate transferring process. Therefore, the n-side electrodes130 b(2130 b) are buried under the n-type semiconductor layer 112(2112)(indicated by dotted line) after the second epitaxial unit 202(2202) istransferred to the second support substrate 30(230). In the meantime,the second epitaxial unit 202(2202) has the p-side electrodes 120 b(2120b) on the surface thereof, and the patterned second adhesive layer230(2230) covers the second epitaxial unit 202(2202) and the surface ofthe p-side electrodes 120 b(2120 b).

As shown in FIG. 5A, after the patterned second adhesive layer 230(2230)on the second epitaxial units 202(2202) and the surface of the p-sideelectrodes 120 b(2120 b) is removed, the second epitaxial unit 202(2202)is divided into multiple third epitaxial units 202′ by dry etching, suchas Reactive Ion Etching (RIE), Inductively Coupled Plasma (ICP), andPlasma Etching (PE). In the meantime, a portion of each of the n-sideelectrodes 130 b′ (shown by oblique lines) under the third epitaxialunits 202′ is exposed. Then, an insulative layer 232 is patterned andformed on a portion of the surface of each of the third epitaxial units202′ and the side wall between the neighboring third epitaxial units202′ by PVD or CVD and patterning process. FIG. 5B shows a side view ofthe two neighboring third epitaxial units 202′ during the process. Inthe embodiment, the material of the insulative layer 232 is SiO₂.Besides SiO₂, the material of the insulative layer 232 comprisesSiN_(x), Al₂O₃, AlN or the combination thereof.

Next, a metal conductive connection structure 125 is formed between theneighboring third epitaxial units 202′ by lithography process toelectrically connect the n-side electrode 130 b′ of one of the thirdepitaxial units 202′ and the p-side electrode 120 b of the other one inan electrical series connection to form a high-voltage single chipsemiconductor light-emitting device 300 shown in FIGS. 4B and 4C. In thesemiconductor light-emitting device 300, the p-side electrode 120 b(2120b) and the n-side electrode 130 b′ are respectively on the oppositesides of the third epitaxial units 202′. The p-side electrode 120 b(2120b) and the n-side electrode 130 b′ of the two of the third epitaxialunits 202′ at the ends of the semiconductor light-emitting device 300are respectively connected to a p-type electrode pad 102 b′ and ann-type electrode pad 120 b″, wherein the p-side electrodes 120 b(2120b), the n-side electrodes 130 b′, the p-type electrode pad 102 b′ andthe n-type electrode pad 120 b″ can be formed with the metal conductiveconnection structure 125 in the same step. As shown in FIG. 4C, in theembodiment, the p-type electrode pad 102 b′ and the n-type electrode pad120 b″ are formed on the surface of the second support substrate 30(230)beyond the third epitaxial units 202′ and do not overlap with thesurface of the third epitaxial units 202′ for increasing the lightextracting efficiency of the semiconductor light-emitting device 300.

For a skilled person in the art, besides the series structure, the thirdepitaxial units 202′ can also be connected to an electrical parallelstructure between the neighboring third epitaxial units 202′. Besidesforming the metal conductive connection structure 125 between the thirdepitaxial units 202′, the method of electrically connecting the thirdepitaxial units 202′ further comprises forming a patterned electricallyconductive structure on the surface of the second support substrate30(230), and then bonding each of the third epitaxial units 202′ inflip-chip type on the second support substrate 30(230) and electricallyconnecting to the patterned electrically conductive structure. Throughthe patterned electrically conductive structure, the third epitaxialunits 202′ can also be connected in series or parallel to form thesemiconductor light-emitting device.

In the other embodiment, the semiconductor light-emitting device 200 canbe produced as an encapsulated semiconductor light-emitting device 400by subsequent processes, and the side view and the top view arerespectively shown in FIGS. 6C and 6D. FIGS. 6A to 6C show the processand the structure of manufacturing the semiconductor light-emittingdevice 400 for clearly presenting the encapsulated semiconductorlight-emitting device 400.

FIG. 6A shows a transparent structure 40 covering and surrounding thesemiconductor light-emitting device 200 and the side wall of each of theepitaxial units thereof by spin coating and deposition, wherein thetransparent structure 40 is transparent to the light emitted from thesemiconductor light-emitting device 200, and the transparent structure40 is used to encapsulate the semiconductor light-emitting device 200for increasing the mechanical strength the semiconductor light-emittingdevice 200, disclosed in the embodiment. The material of the transparentstructure 40 comprises Epoxy, Polyimide, Benzocyclobutene,Perfluorocyclobutane, SU8 photoresist, Acrylic Resin,Polymethylmethacrylate, Poly ethylene terephthalate, Polycarbonate,Polyetherimide, Fluorocarbon Polymer, Glass, Al₂O₃, SINR, SOG, Teflon,or the combination thereof.

FIG. 6B shows that a portion of the transparent structure 40 is removedto expose the p-type extension 130 a′ and the n-type extension 130 a″.As shown in FIG. 6C, an insulative scattering layer 410 is formed tocover the surface of the transparent structure 40 and a portion of thesurface and side surface of the p-type extensions 130 a′ and the n-typeextension 130 a″ by spin coating, deposition, stencil printing, orscreen printing. The insulative scattering layer 410 can be used toscatter and reflect light and insulate against electrical current so theuse of scattering material, reflective material, and insulative materialcan be reduced. In that case, it further prevents the materials frombeing damaged caused by different material characteristics, such as thedifference of thermal expansion coefficients and the mechanicalstrengths so the yield rate can be increased, the cost can be reduced,and the moisture can be prevented from entering the semiconductorlight-emitting device 200. The material of the insulative scatteringlayer 410 comprises Epoxy, SiO_(x), Al₂O₃, TiO₂, Silicone, Resin, or thecombination thereof.

Next, a portion of the insulative scattering layer 410, which iscorresponding to the position of the p-type extensions 130 a′ and then-type extension 130 a″, is removed by lithography process to formopenings 411, 412 corresponding to the position of the p-type extensions130 a′ and the n-type extension 130 a″. As shown in FIG. 6D, in thestep, the insulative scattering layer 410 covers the side wall and aportion surface of the p-type extensions 130 a′ and the n-type extension130 a″ in order to increase the light extracting efficiency.

Finally, a p-type bonding pad 1310 and an n-type bonding pad 1320 arerespectively formed in the openings 411, 412 above the transparentstructure 40 and the insulative scattering layer 410 for wire bonding bychemical plating, electroplating, or sputtering with mask. Aftercompleting the above process, the encapsulated semiconductorlight-emitting device 400 is completed as shown in FIG. 6E. Because thesemiconductor epitaxial stack 110 is surrounded by encapsulatingstructure, the semiconductor light-emitting device 400 has better heatresistance, moisture resistance and oxidative stability. Thesemiconductor light-emitting device 400 is able to electrically connectto the printed circuit board by wire bonding or flip-chip bonding toform a light-emitting device, such as light bulb, back light unit, andvehicle lamp.

FIG. 8 shows a top view of the semiconductor light-emitting device 400.The view along the direction D (shown in FIG. 6E) perpendicular to thefirst support substrate 20 shows that the first epitaxial unit 201 ofthe semiconductor light-emitting device 200 is surrounded by thetransparent structure 40, wherein and the transparent structure 40 iscovered by an insulative scattering layer (not shown). A portion of theinsulative scattering layer is removed to form the openings 411, 412 onthe first epitaxial unit 201, wherein the openings 411, 412 areoverlapped by the p-type bonding pad 1310 and the n-type bonding pad1320 which electrically connect the first epitaxial unit 201. The p-typebonding pad 1310 and the n-type bonding pad 1320 are out of the range ofthe first epitaxial unit 201. Namely, the view along the directionperpendicular to the first support substrate 20 shows that a portion ofthe p-type bonding pad 1310 and a portion of the n-type bonding pad 1320do not overlap with the first epitaxial unit 201.

The aforementioned structure is able to increase the area of the metalbonding pad. As the semiconductor light-emitting device 400 electricallyconnects the external substrate, such as printed circuit board, theconnection between the devices is more reliable and more stable. In apreferable embodiment, the exposed surface of the p-type bonding pad1310 and the exposed surface of the n-type bonding pad 1320 on the sameside of the first epitaxial unit 201 are in the same high level.

The p-type bonding pad 1310 and the n-type bonding pad 1320 are used forinducing an external electrical current, and the material thereofcomprises Cu, Sn, Au, Ni, Ti, Pb, Cu—Sn, Cu—Zn, Cu—Cd, Sn—Pb—Sb,Sn—Pb—Zn, Ni—Sn, Ni—Co, Au alloy, Au—Cu—Ni—Au, or the combinationthereof.

The view along the direction perpendicular to the substrate shows thatthe epitaxial unit can be formed to different shapes for meetingdifferent demands. FIG. 9 shows that the epitaxial unit can be cut intosquare or cross disclosed in the embodiment. The semiconductor epitaxialstack 5110 on the growth substrate 510 is divided into a first epitaxialunit 501 and a second epitaxial unit 502, and then the first epitaxialunit 501 and the second epitaxial unit 502 are respectively transferredto the first support substrate 520 and the second support substrate 530as shown in FIGS. 10A and 10B.

Because the material of the first support substrate 520 and the secondsupport substrate 530 comprises insulative material, such as sapphire(Al₂O₃), an electrically conductive layer can fully contact the surfaceof the support substrate, or be patterned to partially contact thesupport substrate for electrically connecting the epitaxial units on thesupport substrate, wherein the electrically conductive layer is made oftransparent metal oxide conductive layer which is pervious to the lightemitted from the epitaxial units. The transparent metal oxide conductivelayer can be made by CVD or PVD, and the material of the transparentmetal oxide conductive layer comprises ITO, IZO, InO, SnO, FTO, ATO,CTO, AZO, GZO or the combination thereof. The transparent metal oxideconductive layer can also be used for the material of the adhesive layerand formed with the substrate transferring process as mentioned above.

FIGS. 11A to 11E show a method of manufacturing a semiconductorlight-emitting device by using a transparent metal oxide conductivelayer as an adhesive material in accordance with another embodiment. Asshown in FIG. 11A, a semiconductor epitaxial stack is transferred fromthe growth substrate 510 to a first support substrate 520 with a firstadhesive layer 5130 on thereof by the above mentioned method or aconventional method. And then, the semiconductor epitaxial stack ispatterned and divided into a first epitaxial unit 501 and a secondepitaxial unit 502. The first adhesive layer 5130 comprises organicmaterial, such as Acrylic acid, Unsaturated polyester, Epoxy, Oxetane,Vinyl ether, Nylon, PP, PBT, PPO, PC, ABS, and PVC; metal, such as Ti,Au, Be, W, Al, Ge, Cu, and the alloy thereof; oxide, such as ITO, CTO,ATO, IZO, AZO, ZTO, ZnO, and SiO_(x); or nitride, such as SiN_(x).

As FIGS. 11A and 11B show, a semiconductor epitaxial stack includes ann-type semiconductor layer 5112, an active layer 5114 and a p-typesemiconductor layer 5116. As the aforementioned process, thesemiconductor epitaxial stack is patterned and divided into a firstepitaxial unit 501 and multiple second epitaxial units 502. Next, twosecond adhesive layers 5230 are respectively formed on the surface ofeach second epitaxial unit 502 and on the surface of a second supportsubstrate 530, wherein the two second adhesive layers 5230 are made ofthe transparent metal oxide conductive layer. And then, the two secondadhesive layers 5230 are connected by heating or pressing. The secondadhesive layers 5230 can be formed on the full surface of the secondsupport substrate 530 or patterned on the partial surface of the secondsupport substrate 530. As shown in FIGS. 11C and 11D, the first adhesivelayer 5130 between the first support substrate 520 and the secondepitaxial units 502 can be melted by illuminating laser or UV, and thenthe second epitaxial units 502 are transferred to the second supportsubstrate 530. After the second epitaxial units 502 are adhered to thesecond support substrate 530, the remaining first adhesive layer 5130 onthe surface of the each second epitaxial unit 502 on the second supportsubstrate 530 can be removed by dry or wet etching. Finally, the firstepitaxial unit 501 and the multiple second epitaxial units 502 arerespectively on the first support substrate 520 and the second supportsubstrate 530 as shown in FIGS. 10A and 10B.

In the embodiment, the method to separate the first support substrate520 and the second epitaxial units 502 includes melting the firstadhesive layer 5130 by illuminating laser as mentioned above.Alternatively, a material with low adhesion force with the first supportsubstrate 520, such as SiO₂, is used as the first adhesive layer 5130 soa mechanical force can be applied to separate the first supportsubstrate 520 and the second epitaxial units 502 after the secondepitaxial units 502 are adhered to the second support substrate 530 byforming a patterned second adhesive layer 5230 on the surfaces of thesecond epitaxial units 502 which are chosen to be transferred again.

After the second epitaxial units 502 and the first support substrate 520are separated, the second support substrate 530 has the second epitaxialunits 502 thereon which are transferred again. Next, the second supportsubstrate 530 can be patterned and divided into multiple second supportsubstrate units (not shown) for forming light-emitting devices, whereineach of the second support substrate units has one or multiple secondepitaxial units 502 thereon.

FIG. 11E shows that a single second support substrate unit 530′ supportsone second epitaxial unit 502 thereon. Because the patterned secondadhesive layer 5230 is made of transparent metal oxide conductive layer,the patterned second adhesive layer 5230 is able to electrically connectthe n-type semiconductor layer 5112 and extend to the surface of thesecond support substrate unit 530′ beyond the second epitaxial unit 502.Next, an n-side electrode 5120 a and a p-side electrode 5120 b arerespectively patterned on the surface of the second support substrateunit 530′ beyond the second epitaxial unit 502 and on the surface of thep-type semiconductor layer 5116 by lithography process with sputtering,thermal deposition, or electroplating. The n-side electrode 5120 aproduced by the aforementioned process is not on the surface of thesecond epitaxial unit 502 for avoiding shading the light and increasingthe light extracting efficiency.

After the patterned second epitaxial units 502 are transferred to formthe different semiconductor devices, the first epitaxial unit 501, whichremains on the first support substrate 520, can be divided from thefirst support substrate 520 to form different semiconductor devices bysubsequent different processes.

FIG. 13 shows that the remaining first epitaxial unit 501 can furtherform multiple semiconductor light-emitting devices with cross-shapedepitaxial units 501′ represented by the dotted line 510 by the cuttingmethod disclosed in the embodiments. As FIGS. 14A to 14D indicate, theprocess disclosed in the embodiment can efficiently utilize the entiresemiconductor epitaxial stack on the substrate.

The top views and oblique side views of different appearances inaccordance with the aforementioned embodiment are described in thefollowing description. FIG. 14A shows a top view of the semiconductorlight-emitting device 500 comprising the cross epitaxial unit 501′, andFIG. 14B shows an oblique side view thereof. In the embodiment, as shownin FIG. 14A, a transparent metal oxide conductive layer 5280 is formedon the whole top surface of the second support substrate unit 530′, andthe patterned n-side electrode 5120 a and the p-side electrode 5120 bare respectively formed on the surface of the transparent metal oxideconductive layer 5280 extending out from the second epitaxial unit 502and on the surface of the p-type semiconductor layer 5116, wherein thepatterned n-side electrode 5120 a and the p-side electrode 5120 brespectively and electrically contact the n-type semiconductor layer5112 and the p-type semiconductor layer 5116.

FIGS. 14C and 14D respectively show a top view and an oblique side viewof the semiconductor light-emitting device 600 comprising the crossepitaxial unit 501′ in accordance with another embodiment. In theembodiment, the partially patterned transparent metal oxide conductivelayer 5280, which is used as an adhesion layer, is disposed on thesurface of the second support substrate unit 530′, wherein the secondsupport substrate unit 530′ is an insulative substrate, such as sapphire(Al₂O₃). Then, the p-side electrode 5120 b is disposed on the region ofthe surface of the second support substrate unit 530′ not covered by thetransparent metal oxide conductive layer 5280, and a p-type extension5120 b′, which extends from the p-side electrode 5120 b, electricallycontacts the p-type semiconductor layer 5116. The patterned n-sideelectrode 5120 a is disposed on the surface of the patterned secondadhesive layer 5230 beyond the second epitaxial unit 502 andelectrically contacts the n-type semiconductor layer 5112 through thepatterned second adhesive layer 5230. By the design, both of thepatterned n-side electrode 5120 a and the p-side electrode 5120 b arenot on the surface of the second epitaxial unit 502 for reducing thelight shaded by the opaque metal material and for increasing the lightextraction.

As FIGS. 14A and 14C respectively show the top views of thesemiconductor light-emitting devices 500, 600, the cross epitaxial unit501′ is made from the first epitaxial unit 501, which has symmetricalshape and has two different symmetrical surfaces A′ and B′ perpendicularto the substrate, and the end portions of the cross epitaxial unit 501′are near the edges of the second support substrate unit 530′. Therefore,the portion of the second support substrate unit 530′ uncovered by thecross epitaxial unit 501′ can be partitioned into four regions. Inanother embodiment, the first epitaxial unit 501 can be made to L-shapeepitaxial units or irregular polygon epitaxial units, and the secondsupport substrate unit 530′ can also be partitioned into multipleregions, not limited to 4 regions.

In the embodiment, the second support substrate 530 is an insulativesubstrate, such as sapphire (Al₂O₃) substrate, aluminum nitride (AlN)substrate, glass substrate, and organic polymer substrate. And, thesecond support substrate 530 can also be an electrically conductivesubstrate, such as lithium aluminum oxide (LiAlO₂) substrate, zinc oxide(ZnO) substrate and gallium nitride (GaP) substrate. And, the secondsupport substrate 530 can be a transparent substrate or a reflectivesubstrate. Besides, the material of the second support substrate 530 canalso be made of a high thermal dissipation material with a thermalconductivity coefficient larger than 24 W/m*k, such as Cu, Wu, AlN,Metal Matrix Composite (MMC), Ceramic Matrix Composite (CMC), SiC, Al,Si, Diamond, or the combination thereof.

Besides, for the aforementioned semiconductor light-emitting devices200, 300, the area of each of the transparent support substrates (20,30) is larger than the area of the surface of the active layer 114 ofthe semiconductor epitaxial stack 110. While the light enters thetransparent support substrates (20, 30) of which the refractivity islower than the refractivity of the semiconductor epitaxial stack 110,since the transparent support substrates (20, 30) have larger area, morelight can depart from the transparent support substrates (20, 30). Asshown in FIGS. 12A and 12B, for the conventional flip-chip typelight-emitting devices, the conventional flip-chip type light-emittingdevice and the active layer 114 thereof have the same areas. For theflip-chip type semiconductor light-emitting device 200 disclosed in theaforementioned embodiment, the area of the first support substrate 20 ofthe flip-chip type semiconductor light-emitting device 200 (shown inFIG. 3C) is larger than twice the area of the surface of the activelayer 114 thereof, which is different from the conventional flip-chiptype light-emitting devices. The light-emitting devices 5000, 2000 arerespectively formed by respectively connecting the light-emitting diodesto the corresponding circuits of the submounts 50′, 20′ through the tinsolders 560, 260. In the meantime, there is more light L emitted fromthe active layer 114 which can be extracted from large support substrate20 and not be absorbed again by the active layer 114. Thus, thelight-emitting device 2000 has better light extracting efficiency thanthe light-emitting device 5000. Namely, as the large support substrate20 is applied to the high-voltage semiconductor light-emitting device300, the encapsulated semiconductor light-emitting device 400, or thesemiconductor light-emitting devices 500, 600 made from the singlesecond epitaxial units 502, the light extracting efficiencies thereofcan also be improved.

In different embodiment, the number of the semiconductor epitaxialstack(s) on a single support substrate is not limited to one. In orderto simplify the process, after a semiconductor epitaxial stack is formedon a larger first support substrate 20, multiple the same firstepitaxial units 201 and second epitaxial units 202 as shown in FIG. 7can be formed by lithography process and transferring process. Next, themultiple second epitaxial units 202 formed on the first supportsubstrate 20 are transferred to the larger second support substrate 30(such as a wafer) at the same time, and the first epitaxial units 201remain on the first support substrate 20. Next, after the first supportsubstrate 20 and the second support substrate 30 are processed byaforementioned process, the multiple semiconductor light-emittingdevices 200 comprising the first epitaxial units 201, of which the sizeis the same as the size of the substrate shown in FIG. 3C, can be formedby cutting the first support substrate 20; and similarly, the multiplesemiconductor light-emitting devices 300 comprising the third epitaxialunits 202′, of which the size is the same as the size of the substrateshown in FIG. 4C, can be formed by cutting the second support substrate30.

One of the semiconductor light-emitting devices 200 matches one of thesemiconductor light-emitting devices 300, and one unit of a singlesemiconductor epitaxial stack 110 on a single substrate can form onesemiconductor light-emitting devices 200 and one semiconductorlight-emitting devices 300. Therefore, the semiconductor light-emittingdevices 200, 300 should have approximately the same sizes. In otherwords, the areas of the substrates thereof are approximately the same asshown in FIGS. 3C and 4C.

Although the present application has been explained above, it is not thelimitation of the range, the sequence in practice, the material inpractice, or the method in practice. Any modification or decoration forpresent application is not detached from the spirit and the range ofsuch.

What is claimed is:
 1. A method of manufacturing a semiconductorlight-emitting device, comprising the steps of: providing a firstsubstrate; providing a semiconductor epitaxial stack; providing a firstadhesion layer connecting the first substrate and the semiconductorepitaxial stack; patterning the semiconductor epitaxial stack tomultiple epitaxial units; separating the multiple epitaxial units andthe first substrate, wherein the multiple epitaxial units comprises:multiple first epitaxial units, wherein each of the first epitaxialunits has a first geometric shape and a first area; and multiple secondepitaxial units, wherein each of the second epitaxial units has a secondgeometric shape and a second area; providing a second substrate with asurface; transferring the multiple second epitaxial units to the surfaceof the second substrate; dividing the first substrate to form multiplefirst semiconductor light-emitting devices, wherein each of the firstsemiconductor light-emitting devices has one of the first epitaxialunits; and dividing the second substrate to form multiple secondsemiconductor light-emitting devices, wherein each of the secondsemiconductor light-emitting devices has one of the second epitaxialunits; wherein the first geometric shape is different from the secondgeometric shape or the first area is different from the second area. 2.The method of manufacturing a semiconductor light-emitting deviceaccording to claim 1, wherein the step of transferring the multiplesecond epitaxial units to the surface of the second substrate furthercomprises: providing a second adhesion layer connecting the secondsubstrate and the semiconductor epitaxial stack.
 3. The method ofmanufacturing a semiconductor light-emitting device according to claim2, wherein the step of transferring the multiple second epitaxial unitsto the surface of the second substrate further comprises: partiallyremoving the first adhesion layer on the multiple second epitaxial unitsafter connecting the second substrate and the semiconductor epitaxialstack.
 4. The method of manufacturing a semiconductor light-emittingdevice according to claim 1, wherein the step of forming semiconductorepitaxial stack further comprising: forming a first type conductivitysemiconductor layer on the first substrate; forming a second typeconductivity semiconductor layer on the first type conductivitysemiconductor layer; and forming an active layer between the first typeconductivity semiconductor layer and the second type conductivitysemiconductor layer.
 5. The method of manufacturing a semiconductorlight-emitting device according to claim 3, further comprising forming asecond adhesion layer on a portion of a surface of the second substrate,wherein the portion of the surface is corresponding to the multiplesecond epitaxial units.
 6. The method of manufacturing a semiconductorlight-emitting device according to claim 1, wherein the second adhesionlayer comprises organic material, metal or inorganic material.
 7. Themethod of manufacturing a semiconductor light-emitting device accordingto claim 1, wherein the first geometric shape and/or the secondgeometric shape comprises square, rectangle, or cross-shape.
 8. Themethod of manufacturing a semiconductor light-emitting device accordingto claim 5, further comprising a first electrode on the second epitaxialunit.
 9. The method of manufacturing a semiconductor light-emittingdevice according to claim 4, wherein the step of forming the firstsemiconductor light-emitting devices comprises respectively forming afirst electrode electrically connecting a surface of the first typeconductivity semiconductor layer and a second electrode electricallyconnecting a surface of the second type conductivity semiconductorlayer.
 10. The method of manufacturing a semiconductor light-emittingdevice according to claim 1, wherein each of the first semiconductorlight-emitting devices comprises only one the first epitaxial unit and afirst substrate for carrying the first epitaxial unit.
 11. The method ofmanufacturing a semiconductor light-emitting device according to claim1, further comprising dividing each of the second epitaxial units tomultiple third epitaxial units, wherein each of the multiple secondsemiconductor light-emitting devices comprises at least two the thirdepitaxial units and a second substrate unit which is divided from thesecond substrate for carry the third epitaxial units.
 12. The method ofmanufacturing a semiconductor light-emitting device according to claim1, wherein each of the multiple second semiconductor light-emittingdevices comprises at least two the second epitaxial units and a secondsubstrate unit which is divided from the second substrate for carry thesecond epitaxial units.
 13. The method of manufacturing a semiconductorlight-emitting device according to claim 11, further comprising formingat least one conductive connective structure for connecting the thirdepitaxial units in parallel or in series.
 14. The method ofmanufacturing a semiconductor light-emitting device according to claim13, further comprising forming the conductive connective structure on asurface of the second substrate.
 15. The method of manufacturing asemiconductor light-emitting device according to claim 13, furthercomprising forming the conductive connective structure on the thirdepitaxial units.
 16. The method of manufacturing a semiconductorlight-emitting device according to claim 11, wherein the secondepitaxial units arrange in U-type.
 17. The method of manufacturing asemiconductor light-emitting device according to claim 1, wherein thestep of forming the first adhesion layer comprises: forming a patternedsacrificial layer on the first substrate; and forming the first adhesionlayer on the patterned sacrificial layer, wherein the patternedsacrificial layer is corresponding to the position of the secondepitaxial units.
 18. The method of manufacturing a semiconductorlight-emitting device according to claim 17, further comprising removingthe patterned sacrificial layer.
 19. The method of manufacturing asemiconductor light-emitting device according to claim 4, wherein thestep of forming the multiple first semiconductor light-emitting devicesfurther comprises forming a first electrode and a second electroderespectively connecting the first epitaxial unit, wherein the firstelectrode in on a surface of the first type conductivity semiconductorlayer of the first epitaxial unit, and the second electrode is throughthe first epitaxial unit and on the first type conductivitysemiconductor layer and a surface of the second type conductivitysemiconductor layer.
 20. The method of manufacturing a semiconductorlight-emitting device according to claim 9, further comprising forming atransparent structure covering a side wall of the first epitaxial unit.21. The method of manufacturing a semiconductor light-emitting deviceaccording to claim 20, wherein the transparent structure comprisesEpoxy, Polyimide, Benzocyclobutene, Perfluorocyclobutane, SU8photoresist, Acrylic Resin, Polymethylmethacrylate, Poly ethyleneterephthalate, Polycarbonate, Polyetherimide, Fluorocarbon Polymer,Glass, Al2O3, SINR, SOG, Teflon, or the combination thereof.
 22. Themethod of manufacturing a semiconductor light-emitting device accordingto claim 20, wherein the first epitaxial unit further comprises a firstbonding pad and a second bonding pad on the transparent structure andelectrically connecting the first electrode and the second electroderespectively.
 23. The method of manufacturing a semiconductorlight-emitting device according to claim 20, further comprising formingan insulated scattering layer on the transparent structure, wherein theinsulated scattering layer covers side walls and a portion surface ofthe first electrode and the second electrode of the first epitaxialunit.
 24. The method of manufacturing a semiconductor light-emittingdevice according to claim 22, wherein the first bonding pad and thesecond bonding pad of the first epitaxial unit are over the region ofthe first epitaxial unit.
 25. The method of manufacturing asemiconductor light-emitting device according to claim 22, wherein thefirst bonding pad and the second bonding pad are formed by sputtering,thermal deposition, or electroplating method.
 26. The method ofmanufacturing a semiconductor light-emitting device according to claim1, further comprising forming a metallic oxide conductive layer on thesurface of the second substrate.
 27. The method of manufacturing asemiconductor light-emitting device according to claim 26, furthercomprising forming a first electrode on the surface of the secondsubstrate exposing from the metallic oxide conductive layer, wherein thefirst electrode connects the first semiconductor layer of the secondepitaxial unit.
 28. The method of manufacturing a semiconductorlight-emitting device according to claim 11, further comprising forminga first bonding pad and a second bonding pad on the second substrate,and the first bonding pad and the second bonding pad electricallyconnects the third epitaxial unit.
 29. The method of manufacturing asemiconductor light-emitting device according to claim 28, wherein thefirst bonding pad and the second bonding pad are formed on the secondsubstrate beside of the third epitaxial unit.